Advanced Semiconductor Fundamentals Solution Manual -

Ic = Is * (exp(VBE/Vt) - 1)

where Nc and Nv are the effective densities of states in the conduction and valence bands, respectively, Eg is the bandgap energy, k is the Boltzmann constant, and T is the temperature. Advanced Semiconductor Fundamentals Solution Manual

Substituting the values for silicon:

The current-voltage characteristics of a BJT can be described by the Ebers-Moll model. The collector current can be expressed as: Ic = Is * (exp(VBE/Vt) - 1) where

The electron and hole mobilities in silicon at 300 K are: Eg is the bandgap energy